我们可以提供高温超导薄膜基材、磁性薄膜基材、铁电薄膜基材、半导体晶体、光学晶体、激光晶体材料，同时为国内外高校和科研机构提供定向、晶体切割、研磨、抛光等加工服务。
独立式GaN基片(定制尺寸)
规格
| 项目 | GaN-FS-10 | GaN-FS-15 |
| 尺寸 | 10.0mm x 10.5mm | 14.0mm x 15.0mm |
| 孔洞密度 | A级 | 0 cm-2 |
| B 级 | ≤2cm-2 | |
| 厚度 | Rank 300 | 300± 25um |
| Rank 350 | 350± 25um | |
| Rank 400 | 400± 25um | |
| 晶向 | C-axis(0001)±0.5° | |
| TTV(总厚度变化) | ≤15um | |
| BOW | ≤20um | |
| 型号 | N-type | Semi-Insulating |
| 电阻率(300K) | <0.5Ω.cm | >106Ω.cm |
| 位错密度 | Less than 5 x 106 cm-2 | |
| 可用面积 | >90% | |
| 抛光 | 正面: Ra<0.2nm.Epi-ready 抛光 反面:好 | |
| 包装 | 包装在100级洁净室环境中，在氮气环境下的单个晶圆容器中。 | |
5.0mm x 5.5mm is available and other size can be customized.
| Item | GaN-FS-N-1.5 | |||
| Dimensions | Φ25.4mm±0.5mm | Φ38.1mm± 0.5mm | Φ40.0mm ±0.5mm | Φ45.0mm ±0.5mm |
| Marco Defect Density | A Level | ≤2cm-2 | ||
| B Level | >2cm-2 | |||
| Thickness | 350±25um | |||
| Orientation | C-axis(0001)±0.5° | |||
| Orientation | (1-100)±0.5° 8±1mm | (1-100)±0.5° 12±1mm | (1-100)±0.5° 14±1mm | (1-100)±0.5° 14±1mm |
| Secondary Orientation Flat | (11-20)±3° 4±1mm | (11-20)±3° 6±1mm | (11-20)±3° 7±1mm | (11-20)±3° 7±1mm |
| TTV(Total Thickness Variation) | ≤15um | |||
| BOW | ≤20um | |||
| Conduction Type | N-Type | Semi-Insulating | ||
| Resistivity(300K) | <0.5Ω.cm | >106Ω.cm | ||
| Dislocation Density | Less than 5 x 106 cm-2 | |||
| Useable Surface Area | >90% | |||
| Polishing | Front Surface : Ra<0.2nm. Epi-ready polished Back Surface: Fine ground | |||
| Package | Package in a class 100 clean room environment ,in single wafer containers ,under a nitrogen atmosphere . | |||
