2英寸直径碳化硅(SiC)基片规格
| 级别 | 生产 | 研究级 | 简装级 | |
| 直径 | 50.8mm±0.38mm | |||
| 厚度 | 330um±25um | |||
| 晶圆晶向 | On axis :<0001>±0.5°for 4H-N/6H-N/4H-SI/6H-SI Off axis : 4.0°toward<1120>±0.5°for 4H-N/4H-SI | |||
Micropipe Density | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 | |
| 电阻率 | 4H-N | 0.015~0.028Ω!cm | ||
6H-N | 0.02~0.1Ω!cm | |||
4/6H-SI | >1E5Ω!cm | (90%)>1E5Ω!cm | ||
正平面 | {10-10}±5.0° | |||
正长度 | 15.9mm±1.7mm | |||
| 反面长度 | 8.0mm±1.7mm | |||
| 反面晶向 | Silicon face up : 90 °CW from Prime flat ±5.0° | |||
| 边缘 | 1mm | |||
TTV/Bow/Warp | ≤15um/≤25um/≤25um | |||
粗糙度 | Polish Ra ≤1nm | |||
CMP Ra≤0.5nm | ||||
#Cracks by high intensity light | None | None | 1 allowed ,≤1mm | |
*Hex plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |
*Polytype areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |
*&Scratches by high intensity light | 3 scratches to 1 x wafer diameter cumulative length | 5 scratches to 1 x wafer diameter cumulative length | 8 scratches to 1 x wafer diameter cumulative length | |
Edge chip | None | 3 allowed ,≤0.5mm each | 5 allowed ,≤1mm each | |
Contamination by high intensity light | None | |||
注:
*缺陷限制适用于整个晶圆片表面，除了边缘排除区域的边缘
#缺陷应存在于边缘区域，只有超出规定范围的缺陷才可视为不合格原因。
只检查Si表面的划痕。
