6英寸直径碳化硅(SiC)基片规格
Grade | Zero MPD | Production | Research Grade | Dummy Grade |
Diameter | 150.0mm±0.25mm | |||
Thickness | 4H-N | 350um±25um | ||
4H-SI | 500um±25um | |||
Wafer Orientation | On axis :<0001>±0.5°for 4H-SI Off axis : 4.0°toward<1120>±0.5°for 4H-N | |||
Primary Flat | {10-10}±5.0° | |||
Primary Flat Length | 47.5mm±2.5mm | |||
Edge exclusion | 3mm | |||
TTV/Bow/Warp | ≤15um/≤40um/≤60um | |||
Micropipe Density | ≤1cm-2 | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 |
Resistivity 4H-N 4H-SI | 0.015~0.028Ω!cm | |||
≥1E5Ω!cm | ||||
Roughness | Polish Ra ≤1nm CMP Ra≤0.5nm | |||
#Cracks by high intensity light | None | 1 allowed ,≤2mm | Cumulative length ≤10mm,single length≤2mm | |
*Hex plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤ 2% | Cumulative area ≤ 5% | |
*Polytype areas by high intensity light | None | Cumulative area ≤ 2% | Cumulative area ≤ 5% | |
*&Scratches by high intensity light | 3 scratches to 1 x wafer diameter cumulative length | 5 scratches to 1 x wafer diameter cumulative length | 5scratches to 1 x wafer diameter cumulative length | |
Edge chip | None | 3 allowed ,≤0.5mm each | 5 allowed ,≤1mm each | |
Contamination by high intensity light | None | |||
请注意
除边缘排除区域外，缺陷限制适用于整个晶圆片表面。
#缺陷应存在于边缘区域，只有超出规定范围的缺陷才可视为不合格原因。
只检查Si表面的划痕。
