3英寸直径碳化硅(SiC)基片规格
Grade | Production | Research Grade | Dummy Grade | |
Diameter | 76.2mm±0.38mm | |||
Thickness | 350um±25um | |||
Wafer Orientation | On axis :<0001>±0.5°for 4H-SI Off axis : 4.0°toward<1120>±0.5°for 4H-N | |||
Micropipe Density | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 | |
Resistivity | 4H-N | 0.015~0.028Ω!cm | ||
4H-SI | >1E5Ω!cm | (90%)>1E5Ω!cm | ||
Primary Flat | {10-10}±5.0° | |||
Primary Flat Length | 22.2mm±3.2mm | |||
Secondary Flat Length | 11.2mm±1.5mm | |||
Secondary Flat Orientation | Silicon face up : 90 °CW from Prime flat ±5.0° | |||
Edge exclusion | 2mm | |||
TTV/Bow/Warp | ≤15um/≤25um/≤35um | |||
Roughness | Polish Ra ≤1nm | |||
CMP Ra≤0.5nm | ||||
#Cracks by high intensity light | None | None | 1 allowed ,≤2mm | |
*Hex plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |
*Polytype areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |
*&Scratches by high intensity light | 3 scratches to 1 x wafer diameter cumulative length | 5 scratches to 1 x wafer diameter cumulative length | 8 scratches to 2 x wafer diameter cumulative length | |
Edge chip | None | 3 allowed ,≤0.5mm each | 5 allowed ,≤1mm each | |
Contamination by high intensity light | None | |||
注:
*缺陷限制适用于整个晶圆片表面，除了边缘排除区域的边缘
#缺陷应存在于边缘区域，只有超出规定范围的缺陷才可视为不合格原因。
只检查Si表面的划痕。
